Dual panel type organic electroluminescent device and method of fabricating the same

ABSTRACT

An organic electroluminescent device includes first and second substrates facing and spaced apart from each other; a gate line on an inner surface of the first substrate; a semiconductor layer over the gate line, the semiconductor layer overlying a surface of the first substrate; a data line crossing the gate line; a data ohmic contact layer under the data line, the data ohmic contact layer having the same shape as the data line; a power line parallel to, or substantially parallel to, and spaced apart from the data line, the power line including the same material as the gate line; a switching thin film transistor connected to the gate line and the data line, the switching thin film transistor using the semiconductor layer as a switching active layer; a driving thin film transistor connected to the switching thin film transistor and the power line, the driving thin film transistor using the semiconductor layer as a driving active layer; a connection pattern connected to the driving thin film transistor, the connection pattern including a conductive polymeric material; a first electrode on an inner surface of the second substrate; an organic electroluminescent layer on the first electrode; and a second electrode on the organic electroluminescent layer, the second electrode contacting the connection pattern.

The present invention claims the benefit of the Korean PatentApplication No. 2002-84579 filed in Korea on Dec. 26, 2002, which ishereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an organic electroluminescent device,and more particularly, to a dual panel type organic electroluminescentdevice that has a reduced number of masks in its fabricating process,and a fabricating method thereof.

2. Discussion of the Related Art

Among flat panel displays (FPDs), organic electroluminescent (EL)devices have been of particular interest in research and developmentbecause they are light-emitting type displays that have a wide viewingangle as well as a desirable contrast ratio, as compared with liquidcrystal display (LCD) devices. Since a backlight need not be provided inconjunction with such organic EL devices, their size and weight issmall, as compared to other types of display devices. The organic ELdevices have other desirable characteristics, such as low powerconsumption, superior brightness and fast response time. When drivingthe organic EL devices, only a low direct current (DC) voltage isrequired. Moreover, a rapid response speed can be obtained. It isunderstood in this field that because the organic EL devices areentirely formed in a solid phase arrangement, unlike LCD devices, theyare sufficiently strong to withstand external impacts and also have agreater operational temperature range. Moreover, because fabricating anorganic EL device is a relatively simple process with few processingsteps, it is much cheaper to produce an organic EL device when comparedwith LCD devices or plasma display panels (PDPs). In particular, onlydeposition and encapsulation apparatuses are necessary for manufacturingthe organic EL devices.

In an active matrix organic EL device, a voltage applied to the pixeland a charge for maintaining the voltage is stored in a storagecapacitor. This allows for a constant voltage driving the device until avoltage of next frame is applied, regardless of the number of thescanning lines. As a result, since an equivalent brightness is obtainedwith a low applied current, an active matrix organic EL device of lowpower consumption, high resolution and large area may be made.

FIG. 1 is an equivalent circuit diagram showing a basic pixel structureof an active matrix organic electroluminescent device according to therelated art. In FIG. 1, a scanning line 2 is arranged in a firstdirection, and a signal line 4 and a power line 6 are arranged in asecond direction perpendicular to the first direction, thereby defininga pixel region “P.” The signal line 4 and the power line 6 are spacedapart from each other. A switching thin film transistor (TFT) “Ts,” anaddressing element, is connected to the scanning line 2 and the signalline 4, and a storage capacitor “C_(ST)” is connected to the switchingTFT “T_(S)” and the power line 6. A driving TFT “T_(D),” a currentsource element, is connected to the storage capacitor “C_(ST)” and thepower line 6, and an organic electroluminescent (EL) diode “D_(EL)” isconnected to the driving TFT “T_(D).” The organic EL diode “D_(EL)” hasan organic EL layer (not shown) between an anode and a cathode. Theswitching TFT “T_(S)” adjusts a voltage applied to the driving TFT“T_(D)” and the storage capacitor “C_(ST)” stores a charge to maintainthe voltage applied to the driving TFT “T_(D)”.

When a scan signal of the scanning line 2 is applied to a switching gateelectrode of the switching TFT “T_(S),” the switching TFT “T_(S)” isturned ON, and an image signal of the signal line 4 is applied to adriving gate electrode of the driving TFT “T_(D)” and the storagecapacitor “C_(ST)” through the switching element “T_(S)” As a result,the driving TFT “T_(D)” is turned ON. When the driving TFT “T_(D)” isturned ON, a current of the power line 6 is applied to the organic ELdiode “D_(EL)” through the driving TFT “T_(D).” As a result, light isemitted. The current density of the driving element “T_(D)” is modulatedby the image signal applied to the driving gate electrode. As a result,the organic electroluminescent diode “D_(EL)” can display images havingmultiple levels of gray scale. Moreover, since the voltage of the imagesignal stored in the storage capacitor “C_(ST)” is applied to thedriving gate electrode, the current density flowing into the organicelectroluminescent diode “D_(EL)” can be maintained at a uniform leveluntil the next image signal is applied even when the switching element“T_(S)” is turned OFF.

FIG. 2 is a schematic plane view of an organic electroluminescent deviceaccording to the related art.

In FIG. 2, a gate line 37 crosses a data line 51 and a power line 42,which are spaced apart from each other. A pixel region “P” is definedbetween the gate line 37, the data line 51 and the power line 42. Aswitching thin film transistor (TFT) “T_(S)” is disposed adjacent to thecrossing of the gate line 37 and the data line 51. A driving TFT “T_(D)”is connected to the switching TFT “T_(S)” and the power line 42. Astorage capacitor “C_(ST)” uses a portion of the power line 42 as afirst capacitor electrode and an active pattern 34 extending from aswitching active layer 31 of the switching TFT “Ts” as a secondcapacitor electrode. A first electrode 58 is connected to the drivingTFT “T_(D),” and an organic electroluminescent (EL) layer (not shown)and a second electrode (not shown) are sequentially formed on the firstelectrode 58. The first and second electrodes and the organic EL layerinterposed therebetween constitute an organic EL diode “D_(EL).”

FIG. 3 is a schematic cross-sectional view taken along a line “III-III”of FIG. 2. In FIG. 3, a driving thin film transistor (TFT) “T_(D)”including an active layer 32, a gate electrode 38 and source and drainelectrodes 50 and 52 is formed on a substrate 1. The source electrode 50is connected to a power line 42 and the drain electrode 52 is connectedto a first electrode 58. An active pattern 34 made of the same materialas the active layer 32 is formed under the power line 42 with aninsulating layer 40 interposed therebetween. The active pattern 34 andthe power line 42 constitute a storage capacitor “C_(ST).” An organicelectroluminescent (EL) layer 64 and a second electrode 66 aresequentially formed on the first electrode 58 and constitute an organicEL diode “D_(EL).”

For insulating layers, a first insulating layer 30, for example, abuffer layer, is formed between the substrate 1 and the active layer 32.A second insulating layer 36 is formed between the active layer 32 andthe gate electrode 38. A third insulating layer 40 is formed between theactive pattern 34 and the power line 42. A fourth insulating layer 44 isformed between the power line 42 and the source electrode 50. A fifthinsulating layer 54 is formed between the drain electrode 52 and thefirst electrode 58. A sixth insulating layer 60 is formed between thefirst electrode 58 and the organic EL layer 64. The third to sixthinsulating layers 40, 44, 54 and 60 include contact holes which allowfor connections to be made.

FIGS. 4A to 4I are schematic cross-sectional views showing a fabricatingprocess of an organic electroluminescent device according to the relatedart. In FIG. 4A, a first insulating layer 30, for example a bufferlayer, is formed on a substrate 1 by depositing a first insulatingmaterial. After forming a polycrystalline silicon layer (not shown) onthe first insulating layer 30, an active layer 32 and an active pattern34 are formed using a first mask process. In FIG. 4B, after sequentiallydepositing a second insulating material and a first metallic material onan entire surface of the substrate 1, a second insulating layer 36, suchas a gate insulating layer, and a gate electrode 38 are formed using asecond mask process. In FIG. 4C, a third insulating layer 40 is formedon the gate electrode 38 by depositing a third insulating material.After depositing a second metallic material on the third insulatinglayer 40, a power line 42 is formed over the active pattern 34 using athird mask process.

In FIG. 4D, after depositing a fourth insulating material on the powerline 42, a fourth insulating layer 44 having first to third contactholes 46 a, 46 b and 48 is formed using a fourth mask process. Theactive layer 32 can be divided into a channel region 32 a, and sourceand drain regions 32 b and 32 c by a subsequent doping process. Thefirst and second contact holes 46 a and 46 b expose the source and drainregions 32 b and 32 c, respectively. The third contact hole 48 exposesthe power line 42. The source and drain regions 32 b and 32 c are dopedwith impurities.

In FIG. 4E, after depositing a third metallic material on the fourthinsulating layer 44, source and drain electrodes 50 and 52 are formedusing a fifth mask process. The source electrode 50 is connected to thepower line 42 through the third contact hole 48 (of FIG. 4D) and to thesource region 32 b through the first contact hole 46 a (of FIG. 4D). Thedrain electrode 52 is connected to the drain region 32 c through thesecond contact hole 46 b (of FIG. 4D). The active layer 32, the gateelectrode 38 and source and drain electrodes 50 and 52 constitute adriving thin film transistor (TFT) “T_(D).” The power line 42 and theactive pattern 34 are connected to the source electrode 50 and an activelayer of a switching TFT (not shown), respectively. In addition, thepower line 42 and the active pattern 34 having the third insulatinglayer 40 interposed therebetween constitute a storage capacitor“C_(ST)”.

In FIG. 4F, after depositing a fifth insulating material on the sourceand drain electrodes 50 and 52, a fifth insulating layer 54 having afourth contact hole 56 is formed using a sixth mask process. The fourthcontact hole 56 exposes the drain electrode 52.

In FIG. 4G, after depositing a fourth metallic material on the fifthinsulating layer 54, a first electrode 58 is formed using a seventh maskprocess. The first electrode 58 is connected to the drain electrode 52through the fourth contact hole 56 (of FIG. 4F).

In FIG. 4H, after depositing a sixth insulating material on the firstelectrode 58, a sixth insulating layer 60 having an open portion 62 isformed using an eighth mask process. The open portion 62 exposes thefirst electrode 58. The sixth insulating layer 60 protects the drivingTFT “T_(D)” from moisture and contamination.

In FIG. 4I, an organic electroluminescent (EL) layer 64 and a secondelectrode 66 of a fifth metallic material are sequentially formed on thesixth insulating layer 60. The organic EL layer 64 contacts the firstelectrode 58 through the open portion 62 (of FIG. 4H). The secondelectrode 66 is formed on an entire surface of the substrate 1. Thefirst electrode 58 is designed as an anode. For example, the fifthmetallic material can be selected to have high reflectance and low workfunction because the second electrode 66 should reflect light emittedfrom the organic EL layer 64 and provide electrons to the organic ELlayer 64.

FIG. 5 is a schematic cross-sectional view of an organicelectroluminescent device according to the related art. In FIG. 5, firstand second substrates 70 and 90, which have inner surfaces facing eachother and are spaced apart from each other, have a plurality of pixelregions “P.” An array layer 80 including a driving thin film transistor(TFT) “T_(D)” in each pixel region “P” is formed on an inner surface ofthe first substrate 70. A first electrode 72 connected to the drivingTFT “T_(D)” is formed on the array layer 80 in each pixel region “P.”Red, green and blue organic electroluminescent (EL) layers 74 arealternately formed on the first electrode 72. A second electrode 76 isformed on the organic EL layer 74. The first and second electrodes 72and 76, and the organic EL layer 74 interposed therebetween constitutean organic EL diode “D_(EL).” The organic EL device is a bottom typewhere light is emitted from the organic EL layer 74 through the firstelectrode 72 and out of the first substrate 70.

The second substrate 90 is used as an encapsulation substrate. Thesecond substrate 90 has a concave portion 92 at its inner center and theconcave portion 92 is filled with a moisture absorbent desiccant 94 thatremoves moisture and oxygen to protect the organic EL diode “D_(EL).”The inner surface of the second substrate 90 is spaced apart from thesecond electrode 76. The first and second substrates 70 and 90 areattached with a sealant 85 at a peripheral portion of the first andsecond substrates.

In an organic ELD according to the related art, a TFT array part and anorganic electroluminescent (EL) diode are formed over a first substrate,and an additional second substrate is attached with the first substratefor encapsulation. However, when the TFT array part and the organic ELdiode are formed on one substrate in this way, production yield of theorganic ELD is determined by a multiplication of the TFT's yieldtogether with the organic EL diode's yield. Since the organic EL diode'syield is relatively low, the production yield of the overall ELD becomeslimited by the organic EL diode's yield. For example, even when a TFT iswell fabricated, an organic ELD using a thin film of about 1000 Åthickness can be judged as bad due to the defects of an organic emissionlayer. This results in loss of materials and increased production costs.

In general, organic ELDs are classified into bottom emission types andtop emission types according to an emission direction of light used fordisplaying images via the organic ELDs. Bottom emission type organicELDs have the advantages of high encapsulation stability and highprocess flexibility. However, the bottom emission type organic ELDs areineffective for high resolution devices because they have poor apertureratios. In contrast, top emission organic ELDs have a higher expectedlife span because they are more easily designed and they have a highaperture ratio. However, in top emission type organic ELDs, the cathodeis generally formed on an organic emission layer. As a result,transmittance and optical efficiency of a top emission type organic ELDsare reduced because of a limited number of materials that may beselected. If a thin film-type passivation layer is formed to prevent areduction of the light transmittance, the thin film-type passivationlayer may fail to prevent infiltration of exterior air into the device.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to an organicelectroluminescent device and a method of fabricating the same thatsubstantially obviate one or more of the problems due to limitations anddisadvantages of the related art.

An object of the present invention is to provide an organicelectroluminescent device having an improved production yield, a highresolution and a high aperture ratio.

Additional features and advantages of the invention will be set forth inthe description which follows, and in part will be apparent from thedescription, or may be learned by practice of the invention. Theobjectives and other advantages of the invention will be realized andattained by the structure particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposeof the present invention, as embodied and broadly described, an organicelectroluminescent device includes first and second substrates facingand spaced apart from each other; a gate line on an inner surface of thefirst substrate; a semiconductor layer over the gate line, thesemiconductor layer overlying a surface of the first substrate; a dataline crossing the gate line; a data ohmic contact layer under the dataline, the data ohmic contact layer having the same shape as the dataline; a power line parallel to, or substantially parallel to, and spacedapart from the data line, the power line including the same material asthe gate line; a switching thin film transistor connected to the gateline and the data line, the switching thin film transistor using thesemiconductor layer as a switching active layer; a driving thin filmtransistor connected to the switching thin film transistor and the powerline, the driving thin film transistor using the semiconductor layer asa driving active layer; a connection pattern connected to the drivingthin film transistor, the connection pattern including a conductivepolymeric material; a first electrode on an inner surface of the secondsubstrate; an organic electroluminescent layer on the first electrode;and a second electrode on the organic electroluminescent layer, thesecond electrode contacting the connection pattern.

In another aspect, a method of fabricating an organic electroluminescentdevice includes forming a driving gate electrode, a gate line, and apower line on a first substrate using a first mask process; forming afirst insulating layer and a semiconductor layer sequentially on thedriving gate electrode, the gate line, and the power line; forming afirst layer of silicon and a second layer of metal sequentially on thesemiconductor layer; patterning the first and second layers sequentiallyusing a second mask process to form a driving ohmic contact layer, adata ohmic contact layer, driving source and drain electrodes, and adata line, the driving ohmic contact layer being formed under thedriving source and drain electrodes, the data ohmic contact layer beingformed under the data line; forming a second insulating layer having asource contact hole and a drain contact hole on the driving source anddrain electrodes and the data line using a third mask process, thesource contact hole exposing the driving source electrode, and the draincontact hole exposing the driving drain electrode; forming a connectionpattern and a connection electrode of conductive polymeric material onthe second insulating layer, the connection pattern being connected tothe driving drain electrode through the drain contact hole, and theconnection electrode being connected to the driving source electrodethrough the source contact hole; forming a first electrode on a secondsubstrate; forming an organic electroluminescent layer on the firstelectrode; forming a second electrode on the organic electroluminescentlayer; and attaching the first and second substrates such that thesecond electrode contacts the connection pattern.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention. In the drawings:

FIG. 1 is an equivalent circuit diagram showing a basic pixel structureof an active matrix organic electroluminescent device according to therelated art;

FIG. 2 is a schematic plane view of an organic electroluminescent deviceaccording to the related art;

FIG. 3 is a schematic cross-sectional view taken along a line “III-III”of FIG. 2;

FIGS. 4A to 4I are schematic cross-sectional views showing a fabricatingprocess of an organic electroluminescent device according to the relatedart;

FIG. 5 is a schematic cross-sectional view of an organicelectroluminescent device according to the related art;

FIG. 6 is a schematic cross-sectional view of an organicelectroluminescent device according to an embodiment of the presentinvention;

FIG. 7 is a schematic plane view of an organic electroluminescent deviceaccording to an embodiment of the present invention;

FIGS. 8A to 8D are schematic cross-sectional views showing a fabricatingprocess of a driving thin film transistor for an organicelectroluminescent device according to an embodiment of the presentinvention; and

FIGS. 9A to 9D are schematic cross-sectional views showing a fabricatingprocess of a data pad, a gate pad and a power pad for an organicelectroluminescent device according to an embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the preferred embodiments of thepresent invention, examples of which are illustrated in the accompanyingdrawings.

FIG. 6 is a schematic cross-sectional view of an organicelectroluminescent device according to an embodiment of the presentinvention. In FIG. 6, first and second substrates 110 and 150, whichhave inner surfaces facing each other and are spaced apart from eachother, have a plurality of pixel regions “P.” An array layer 140including a driving thin film transistor (TFT) “T_(D)” in each pixelregion “P” is formed on an inner surface of the first substrate 110. Aconnection pattern 142 connected to the driving TFT “T_(D)” is formed onthe array layer 140 in each pixel region “P.” The connection pattern 142can be made of a conductive material or multiple layers, including aninsulating material, having sufficient thickness for connection. Anadditional connection electrode can be used for connecting theconnection pattern 142 and the driving TFT “T_(D).” The driving TFT“T_(D)” includes a gate electrode 112, an active layer 114, and sourceand drain electrodes 116 and 118. The connection pattern 142 isconnected to the drain electrode 118.

A first electrode 152 is formed on an inner surface of the secondsubstrate 150. An organic electroluminescent (EL) layer 160 includingred, green and blue organic emission layers 156 a, 156 b and 156 calternately disposed in each pixel region “P” is formed on the firstelectrode 152. A second electrode 162 is formed on the organic EL layer160 in each pixel region “P.” The organic EL layer 160 can be formed ofa single layer or a multiple layer. In case of a multiple layer, theorganic EL layer 160 may include a first carrier-transporting layer 154on the first electrode 152, one of red, green and blue emission layers156 a, 156 b and 156 c on the first carrier-transporting layer 154 and asecond carrier-transporting layer 158 on each of the emission layers 156a, 156 b and 156 c. For example, when the first and second electrodes152 and 162 are respectively an anode and a cathode, the firstcarrier-transporting layer 154 corresponds to a hole-injecting layer anda hole-transporting layer, and the second carrier-transporting layer 158corresponds to an electron-transporting layer and an electron-injectinglayer. The first and second electrodes 152 and 162, and the organic ELlayer 160 interposed therebetween constitute an organic EL diode“D_(EL).”

The first and second substrates 110 and 150 are attached with a sealant170 at a peripheral portion thereof. Top surface of the connectionpattern 142 contacts bottom surface of the second electrode 162, therebya current of the driving TFT “T_(D)” flowing into the second electrode162 through the connection pattern 142.

An organic EL device according to this embodiment of the presentinvention is a dual panel type where an array layer 140 and an organicEL diode “D_(EL)” are formed on respective substrates and a connectionpattern 142 connects the array layer 140 and the organic EL diode“D_(EL).” Various modifications and variations can be made in astructure of the TFT and a connecting method of the array layer and theorganic EL diode. Moreover, since the organic EL device according to thepresent invention is a top emission type, a thin film transistor can beeasily designed, and high resolution and high aperture ratio can beobtained.

FIG. 7 is a schematic plane view of an organic electroluminescent deviceaccording to an embodiment of the present invention. In FIG. 7, a gateline 212 is formed along a first direction. A data line 240 and a powerline 220 spaced apart from each other are formed along a seconddirection perpendicular to the first direction. A switching thin filmtransistor (TFT) “T_(S)” including a switching gate electrode 214, aswitching active layer 228, and switching source and drain electrodes232 and 236 is formed at a crossing of the gate line 212 and the dataline 240. The switching gate electrode 214 is connected to the gate line212 and the switching source electrode 232 is connected to the data line240. The switching source and drain electrodes 232 and 236 are spacedapart from each other. The switching active layer 228 has a shapecorresponding to the switching source and drain electrodes 232 and 236.The power line 220 may be made of the same material as the switchinggate line 212 using a single fabrication process.

A driving TFT “T_(D)” includes a driving gate electrode 216, a drivingactive layer 230, and driving source and drain electrodes 234 and 238.The driving gate electrode 216 is connected to the switching drainelectrode 236 and may be made of the same material as the gate line 212using the same fabrication process. The driving source and drainelectrodes 234 and 238 are spaced apart from each other and may be madeof the same material as the data line 240 using the same fabricationprocess. The driving active layer 230 underlies the driving source anddrain electrodes 234 and 238. A power electrode 262 is connected to thedriving source electrode 234 through a source contact hole 248 and tothe power line 220 through a power contact hole 246.

A connection pattern 260 is formed in a connection region “C” adjacentto the driving TFT “T_(D)” and connected to the driving drain electrode238. The connection pattern 260 may be made of the same material as thepower electrode 262 using the same fabrication process. For example, aconductive polymeric material may be used for the connection pattern260. The connection region “C” corresponds to a second electrode (notshown) of an organic EL diode. A capacitor electrode 244 extending fromthe switching drain electrode 236 overlaps the power line 220 to form astorage capacitor “C_(ST).”

A data pad 242, a gate pad 218 and a power pad 222 are formed at one endof the data line 240, the gate line 212 and the power line 220,respectively. A data pad terminal 264, a gate pad terminal 266 and apower pad terminal 268 are formed over the data pad 242, the gate pad218 and the power pad 222, respectively. The data pad terminal 264, thegate pad terminal 266 and the power pad terminal 268 may be made of thesame material as the connection pattern 260 using the same fabricationprocess.

A semiconductor layer (not shown) including a doped amorphous siliconlayer 224 b is formed under each of the data line 240, the data pad 242and the capacitor electrode 244. The doped amorphous silicon layer 224 bmay be made of the same material as an ohmic contact layer (not shown)of the switching active layer 228 and the driving active layer 230.Since the gate line 212 and the power line 220 are simultaneously formedusing the same fabrication process, a first link line 241 a is used as aconnector of the power line 220 adjacent to the crossing of the gateline 212 and the power line 220 to prevent an electrical short betweenthe gate line 212 and the power line 220. The first link line 241 a maybe made of the same material as the data line 240 using the samefabrication process. Second link lines 241 b are formed at both ends ofthe first link line 241 a and the first link line 241 a is connected tothe power line 220 through the second link lines 241 b. The second linklines 241 b may be made of the same material as the connection pattern260 using the same fabrication process. In another embodiment, only thesecond link line 241 b can be used for connection of the power line 220over the gate line 212. Since different signals are applied to the datapad 242 and the power pad 222, the data pad 242 and the power pad 222may be disposed at opposite ends of a first substrate.

FIGS. 8A to 8D are schematic cross-sectional views showing a fabricatingprocess of a driving thin film transistor for an organicelectroluminescent device according to an embodiment of the presentinvention, and FIGS. 9A to 9D are schematic cross-sectional viewsshowing a fabricating process of a data pad, a gate pad and a power padfor an organic electroluminescent device according to an embodiment ofthe present invention. FIGS. 8A to 8D are taken along a line “VIII-VIII”of FIG. 7 and FIGS. 9A to 9D are taken along a line “IX-IX” of FIG. 7. Amask process is a photolithographic process including a photoresist (PR)patterning step using exposure and development, and an etching stepusing the PR pattern as a mask.

In FIGS. 8A and 9A, a driving gate electrode 216, a gate pad 218 and apower pad 222 of a first metallic material are formed on a firstsubstrate 210 using a first mask process. Even though not shown in FIGS.8A and 9A, a power line connected to the power pad 222 is formed at thesame time. The first metallic material has low resistivity. For example,aluminum (Al) or aluminum (Al) alloy can be used as the first metallicmaterial.

In FIGS. 8B and 9B, a first insulating layer (a gate insulating layer)223 of a first insulating material and an amorphous silicon (a-Si:H)layer 224 a are sequentially formed on the driving gate electrode 216,the gate pad 218 and the power pad 222. After sequentially depositing adoped silicon material and a second metallic material on the amorphoussilicon layer 224 a, an ohmic contact layer 230 b, source and drainelectrodes 234 and 238, and a data pad 242 are formed using a secondmask process. The amorphous silicon layer 224 a includes an activeportion 230 a corresponding to the driving gate electrode 216. Theactive portion 230 a of the amorphous silicon layer 224 a and the ohmiccontact layer 230 b constitute a driving active layer 230. The sourceand drain electrodes 234 and 238 are spaced apart from each other and anexposed active portion 230 a becomes a channel region “ch.” The data pad242 is formed in a data pad region “D.” A data line (not shown) issimultaneously formed with the data pad 242 and the data pad region “D”is disposed at one end of the data line. The data pad 242 and the powerpad 222 may be formed at opposite ends of the first substrate 210.

The driving gate electrode 216, the driving active layer 230, and sourceand drain electrodes 234 and 238 constitute a driving thin filmtransistor (TFT) “T_(D).” A doped amorphous silicon layer 224 b isformed under the data pad 242. The doped amorphous silicon layer 224 bmay be made of the same material as the ohmic contact layer 230 b of thedriving active layer 230 and has a shape corresponding to the data pad242. The first insulating material is a silicon insulating material,such as silicon nitride (SiN_(x)) or silicon oxide (SiO₂). The secondmetallic material is a chemically resistive material, such as molybdenum(Mo), titanium (Ti), chromium (Cr) and tungsten (W), for example.

In FIGS. 8C and 9C, after depositing a second insulating material on thedriving TFT “T_(D),” the data pad 242, the gate pad 218 and the powerpad 222, a second insulating layer (a passivation layer) 258 havingsource and drain contact holes 248 and 250, a data pad contact hole 252,a gate pad contact hole 254 and a power pad contact hole 256 is formedthrough a third mask process. The source and drain contact holes 248 and250 expose the source and drain electrodes 234 and 238, respectively.The data pad contact hole 252, the gate pad contact hole 254 and thepower pad contact hole 256 expose the data pad 242, the gate pad 218 andthe power pad 222, respectively. The gate pad contact hole 254 and thepower pad contact hole 256 are formed through the first insulating layer223, the amorphous silicon layer 224 a and the second insulating layer258. The drain contact hole 250 is disposed in a connection region “C”(of FIG. 7) corresponding to a second electrode of an organicelectroluminescent diode.

In FIGS. 8D and 9D, after depositing a conductive polymeric material onthe second insulating layer 258, a connection pattern 260, a powerelectrode 262, a data pad terminal 264, a gate pad terminal 266 and apower pad terminal 268 are formed using a fourth mask process. Theconnection pattern 260 is connected to the drain electrode 238 throughthe drain contact hole 250 and the power electrode 262 is connected tothe source electrode 234 through the source contact hole 248. The datapad terminal 264 is connected to the data pad 242 through the data padcontact hole 252, the gate pad terminal 266 is connected to the gate pad218 through the gate pad contact hole 254, and the power pad terminal268 is connected to the power pad 222 through the power pad contact hole256.

An organic electroluminescent device of the present invention has someadvantages. First, since an inverted staggered thin film transistor ofamorphous silicon is used, the organic ELD can be fabricated using a lowtemperature process. Second, since a number of mask processes can bereduced even when an additional connection pattern is added, productionyield can be effectively improved because the process is simplified.Third, since array patterns and an organic EL diode are formed on therespective substrate, production yield and production managementefficiency are improved, and lifetime of an organic EL device islengthened. Fourth, since the ELD is a top emission type, a thin filmtransistor can be easily designed, and high resolution and high apertureratio can be obtained regardless of lower array patterns.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the organicelectroluminescent device and fabricating method thereof of the presentinvention without departing from the spirit or scope of the invention.Thus, it is intended that the present invention cover the modificationsand variations of this invention provided they come within the scope ofthe appended claims and their equivalents.

1-15. (canceled)
 16. A method of fabricating an organicelectroluminescent device, comprising: forming a driving gate electrode,a gate line, and a power line on a first substrate using a first maskprocess; forming a first insulating layer and a semiconductor layersequentially on the driving gate electrode, the gate line, and the powerline; forming a first layer of silicon and a second layer of metalsequentially on the semiconductor layer; patterning the first and secondlayers sequentially using a second mask process to form a driving ohmiccontact layer, a data ohmic contact layer, driving source and drainelectrodes, and a data line, the driving ohmic contact layer beingformed under the driving source and drain electrodes, the data ohmiccontact layer being formed under the data line; forming a secondinsulating layer having a source contact hole and a drain contact holeon the driving source and drain electrodes and the data line using athird mask process, the source contact hole exposing the driving sourceelectrode, and the drain contact hole exposing the driving drainelectrode; forming a connection pattern and a connection electrode ofconductive polymeric material on the second insulating layer, theconnection pattern being connected to the driving drain electrodethrough the drain contact hole, and the connection electrode beingconnected to the driving source electrode through the source contacthole; forming a first electrode on a second substrate; forming anorganic electroluminescent layer on the first electrode; forming asecond electrode on the organic electroluminescent layer; and attachingthe first and second substrates such that the second electrode contactsthe connection pattern.
 17. The method according to claim 16, furthercomprising forming a first link line at a crossing of the gate line andthe power line, wherein the first link line is simultaneously formedwith the connection pattern.
 18. The method according to claim 16,further comprising forming first and second link lines at a crossing ofthe gate line and the power line, wherein the first link line issimultaneously formed with the connection pattern, wherein the secondlink line is simultaneously formed with the data line.
 19. The methodaccording to claim 16, further comprising forming a switching thin filmtransistor connected to the gate line and data line.
 20. The methodaccording to claim 16, further comprising: forming a gate pad and apower pad on the first substrate using the first mask process; forming adata pad using the second mask process, and forming a gate pad contacthole, a data pad contact hole and power pad contact hole in the secondinsulating layer using the third mask process, the gate pad contact holeexposing the gate pad, the data pad contact hole exposing the data pad,and the power pad contact hole exposing the power pad; and forming agate pad terminal, a data pad terminal and a power pad terminal ofconductive polymeric material on the second insulating layer, the gatepad terminal being connected to the gate pad through the gate padcontact hole, the data pad terminal being connected to the data padthrough the data pad contact hole, the power pad terminal beingconnected to the power pad through the power pad contact hole.
 21. Themethod according to claim 20, wherein the second insulating layerincludes the gate pad contact hole and the power pad contact holethrough the semiconductor layer and the first insulating layer.
 22. Themethod according to claim 16, wherein the semiconductor layer is formedof amorphous silicon.
 23. The method according to claim 16, wherein thefirst layer of silicon is formed of doped amorphous silicon.
 24. Themethod according to claim 16, wherein the driving ohmic contact layer isformed of doped amorphous silicon.
 25. The method according to claim 16,wherein the data ohmic contact layer is formed of doped amorphoussilicon.